unisonic technologies co., ltd utt20n06 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-708.c 20a, 60v n-channel power mosfet ? description the utc utt20n06 is an n-channel enhancement mode power mosfet using utc?s advanced tech nology to provide customers with a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc utt20n06 is universally applied in low voltage, such as automotive, high efficiency switch ing for dc/dc converters and dc motor control. ? features * r ds(on) <46m ? @v gs = 10 v * typically 58pf low c rss * high switching speed * typically 21.2nc low gate charge ? symbol 1.gate 2.drain 3.source ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt20n06l-ta3-t UTT20N06G-TA3-T to-220 g d s tube utt20n06l-tn3-t utt20n06g-tn3-t to-252 g d s tube utt20n06l-tn3-r utt20n06g-tn3-r to-252 g d s tape reel utt20n06l-tq2-t utt20n06g-tq2-t to-263 g d s tube utt20n06l-tq2-r utt20n06g-tq2-r to-263 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt20n06 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-708.c ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current continuous i d 20 a pulsed i dm 80 a single pulsed avalanche energy e as 170 mj power dissipation to-220/to-263 p d 89 w to-252 50 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient to-220/to-263 ja 62 c/w to-252 110 junction to case to-220/to-263 jc 1.4 c/w to-252 2.5 ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v drain-source leakage current i dss v ds =60v, v gs =0v 1 a v ds =48v, v gs =0v, t c =125c 10 a gate-source leakage current forward i gss v gs =+16v, v ds =0v +100 na reverse v gs =-16v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =20a 37.5 46 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 725 1015 pf output capacitance c oss 213 300 pf reverse transfer capacitance c rss 58 120 pf switching parameters total gate charge q g v gs =10v, v ds =30v, i d =20a, i g =3.33ma 21.2 30 nc gate to source charge q gs 5.6 nc gate to drain charge q gd 7.3 nc turn-on delay time t d ( on ) v dd =30v, i d =1a, r g =25 ? , v gs =10v 9.5 ns rise time t r 60.5 120 ns turn-off delay time t d ( off ) 27.1 ns fall-time t f 37.1 80 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 20 a maximum body-diode pulsed current i sm 80 a drain-source diode forward voltage v sd i s =20a, v gs =0v 1.2 v
utt20n06 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-708.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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